document number: 89157 for technical questions within your region, please contact one of the following: www.vishay.com revision: 17-nov-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 schottky barrier rectifier m3035s, M3045S vishay general semiconductor new product features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection applications. mechanical data case: to-220ab molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free and rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 30 a v rrm 35 v, 45 v i fsm 200 a v f at i f = 30 a 0.61 v t j max. 150 c to-220ab m3035s, M3045S 1 2 3 pin 1 pin 2 case pin 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol m3035s M3045S unit maximum repetitive peak reverse voltage v rrm 35 45 v maximum average forward rectified current (fig. 1) i f(av) 30 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 200 a peak repetitive reverse current per leg at t p = 2 s, 1 khz i rrm 2.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 65 to + 150 c storage temperature range t stg - 65 to + 175 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89157 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-nov-09 m3035s, M3045S vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage i f = 15 a t j = 25 c v f (1) 0.54 - v i f = 30 a 0.65 0.70 i f = 15 a t j = 125 c 0.46 - i f = 30 a 0.61 0.66 maximum instantaneous reverse current at rated v r t j = 25 c i r (2) 40 200 a t j = 125 c 26 55 ma typical junction capacitance 4.0 v, 1 mhz c j 980 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol m3035s M3045S unit typical thermal resistance r jc 2.0 c/w ordering information (example) package preferred p/n unit weight (g ) package code base quantity delivery mode to-220ab M3045S-m3/4w 1.878 4w 50/tube tube case temperat u re (c) 35 15 0 0 75 150 a v erage for w ard c u rrent (a) 25 25 100 5 50 125 10 30 20 nu m b er of cycles at 60 hz 300 150 0 1100 peak for w ard s u rge c u rrent (a) 200 10 50 100 250 t j = t j max. 8 .3 ms single half sine- w a v e www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 89157 for technical questions within your region, please contact one of the following: www.vishay.com revision: 17-nov-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 m3035s, M3045S vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) instantaneo u s for w ard v oltage ( v ) 100 0.1 0.01 00.9 instantaneo u s for w ard c u rrent (a) 1 0.1 10 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 p u lse w idth = 300 s 1 % d u ty cycle t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) 1000 0.1 0.001 10 100 instantaneo u s re v erse c u rrent (ma) 1 20 10 90 8 0 70 60 50 40 30 t j = 150 c t j = 125 c t j = 25 c 0.01 100 re v erse v oltage ( v ) 10 000 100 0.1 100 j u nction capacitance (pf) 110 1000 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p t - p u lse d u ration (s) 10 0.1 0.01 100 transient thermal impedance (c/ w ) 110 1 0.1 j u nction to case to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) www.datasheet.co.kr datasheet pdf - http://www..net/
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